Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien


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Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien Detail:

AgGaSe2 crystals have band edges at 0.73 and 18 µm. Its useful transmission range (0.9–16 µm) and wide phase matching capability provide excellent potential for OPO applications when pumped by a variety of different lasers. Tuning within 2.5–12 µm has been obtained when pumping by Ho:YLF laser at 2.05 µm; as well as non-critical phase matching (NCPM) operation within 1.9–5.5 µm  when pumping at 1.4–1.55 µm. AgGaSe2 (AgGaSe2) has been demonstrated to be an efficient frequency doubling crystal for infrared CO2 lasers radiation.


Applications

• Generation second harmonics on CO and CO2 - lasers
• Optical parametric oscillator
• Different frequency generator to middle infrared regions up to 18 um.
• Frequency mixing in the middle IR region


Dimensions

Standard cross sections are 8x 8mm, 5 x 5mm, Crystal length range from 1 to 30 mm. Custom sizes are also available on request.

Basic properties
Crystal Structure Tetragonal
Cell Parameters a=5.992 Å, c=10.886 Å
Melting Point 851 °C
Density 5.700 g/cm3
Mohs Hardness 3-3.5
Absorption Coefficient <0.05 cm-1 @ 1.064 µm
<0.02 cm-1 @ 10.6 µm
Relative Dielectric Constant @ 25 MHz ε11s=10.5
ε11t=12.0
Thermal Expansion Coefficient ||C: -8.1 x 10-6 /°C
⊥C: +19.8 x 10-6 /°C
Thermal Conductivity 1.0 W/M/°C

Linear Optical Properties

Transparency Range

0.73-18.0 um

Refractive Indices
@ 1.064 um
@ 5.300 um
@ 10.60 um

no
2.7010
2.6134
2.5912

ne
2.6792
2.5808
2.5579

Thermo-Optic Coefficient

dno/dt=15.0 x 10-5/°C
dne/dt=15.0 x 10-5/°C

Sellmeier Equations
( ʎ in um)
no2=4.6453+2.2057/(1-0.1879/ʎ2)+1.8577/(1-1600/ʎ2)
ne2=5.2912+1.3970/(1-0.2845/ʎ2)+1.9282/(1-16007/ʎ2)

Nonlinear Optical Properties

NLO Coefficients @ 10.6 um d36=d24=d15=39.5 pm/V
Linear Electro-optic Coefficients Y41T=4.5 pm/V
Y63T=3.9 pm/V
Damage Threshold
@ ~ 10 ns, 1.064 um
20-30 MW/cm2(surface)

Technical Properties

Dimension tolerance (W +/-0.1 mm) x (H +/-0.1 mm) x (L + 1 mm/-0.5 mm)
Clear aperture > 90% central area
Flatness λ/8 @ 633 nm for T>=1 mm
Surface Quality Scratch/dig 60-40 after coating
Parallelism better than 30 arc seconds
Perpendicularity 10 arc minutes
Orentation accuracy <30’’

ZnGeP201


Product detail pictures:

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures

Well-designed Ho:Y3al5o12 - AgGaSe2 Crystals – Dien detail pictures


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