China OEM IR NLO Crystal BGSe - KD*P EO Q-Switch – Dien


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China OEM IR NLO Crystal BGSe - KD*P EO Q-Switch – Dien Detail:

E-O Q Switch alters the polarization state of light passing through it when an applied voltage induces birefringence changes in an electro-optic crystal such as KD*P. When used in conjunction with polarizers, these cells can function as optical switches, or laser Q-switches.
We provide E-O Q-Switchs based on advanced crystal fabrication and coating technlogy, we can offer a variety of laser wavelengths EO Q switchs which exhibits high transmission (T>97%), high damaged threshold (>500W/cm2 )and high extinction ratio (>1000:1).


Applications

• OEM laser systems
• Medical/cosmetic lasers
• Versatile R&D laser platforms
• Military & aerospace laser systems


Basic Properties

Features

Benefits

CCI Quality – economically priced

Exceptional value

Finest strain-free KD*P

High contrast ratio

High damage threshold

Low 1/2 wave voltage

Space efficient

Ideal for compact lasers

Ceramic apertures

Clean and highly damage-resistant

High contrast ratio

Exceptional hold-off

Quick electrical connectors

Efficient/reliable installation

Ultra-flat crystals

Excellent beam propagation


Technical Parameters

1/4 Wave Voltage 3.3 kV
Transmitted Wave Front Error < 1/8 Wave
ICR >2000:1
VCR >1500:1
Capacitance 6 pF
Damage Threshold > 500 MW / cm2 @1064nm, 10ns

Product detail pictures:

China OEM IR NLO Crystal BGSe - KD*P EO Q-Switch – Dien detail pictures


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