China OEM IR NLO Crystal BGSe - KD*P EO Q-Switch – Dien

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China OEM IR NLO Crystal BGSe - KD*P EO Q-Switch – Dien Detail:

E-O Q Switch alters the polarization state of light passing through it when an applied voltage induces birefringence changes in an electro-optic crystal such as KD*P. When used in conjunction with polarizers, these cells can function as optical switches, or laser Q-switches.
We provide E-O Q-Switchs based on advanced crystal fabrication and coating technlogy, we can offer a variety of laser wavelengths EO Q switchs which exhibits high transmission (T>97%), high damaged threshold (>500W/cm2 )and high extinction ratio (>1000:1).

Applications

• OEM laser systems
• Medical/cosmetic lasers
• Versatile R&D laser platforms
• Military & aerospace laser systems

Basic Properties

Features	Benefits
CCI Quality – economically priced	Exceptional value
Finest strain-free KD*P	High contrast ratio
	High damage threshold
	Low 1/2 wave voltage
Space efficient	Ideal for compact lasers
Ceramic apertures	Clean and highly damage-resistant
High contrast ratio	Exceptional hold-off
Quick electrical connectors	Efficient/reliable installation
Ultra-flat crystals	Excellent beam propagation

Technical Parameters

1/4 Wave Voltage	3.3 kV
Transmitted Wave Front Error	< 1/8 Wave
ICR	>2000:1
VCR	>1500:1
Capacitance	6 pF
Damage Threshold	> 500 MW / cm² @1064nm, 10ns

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